Terms, definitions and characteristics
Term | Ref.symbol | Definitions |
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Material | ||
Synthetic quartz crystal |
SQC | Synthetic quartz crystal with quality grade C or better, inclusion density Grade II and etch channel density Grade 2, ( according EN/IEC 60758 ) |
Lithium Niobate | LN | Crystal material with Curie temperature within specified value and with single domain structure by polarization process |
Lithium Tantalate | LT | Crystal material with Curie temperature within specified value and with single domain structure by polarization process |
Dimensions | ||
Diameter | D | Diameter of circular portion of wafer in millimeters or inchs |
Thickness | T | Thickness at the center of wafer measured by thickness meter having an accuracy of 1 µm |
Orientation flat | OF | Cut surface intersecting around wafer for indication of wafer orientation |
Index flat ( secondary ) |
IF | Cut surface intersecting around wafer for additional indication of wafer orientation (according customer specification) |
Bevel | A round shaping of wafer on the edge | |
Surface orientation | Crystallographical orientation of the axis perpendicular to the surface of wafer | |
Surface characteristics |
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Flatness | TV5 | Thickness variation of wafer for five points (one at the center and 4 points at the edge) |
LTV | Local thickness variation | |
Bow | Bending deformation of wafer | |
Warp | Deformation of wafer, definition see IEC 62276, Ed.1 | |
Defects | Perturbations on polished ( working ) wafer surface. Detail definitions of defects, see IEC 62276. |
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Back surface roughness |
Ra | Definition according ISO 468, value according customer specification Alternative: specification by abrasive grain size. |